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| FDY3000NZ DualNChannel2. Specii d Power ench MOSFET 5V fe Tr January 2007 January 2007 FDY3000NZ DualNChannel2. Specii Power e 5V fed Tr nch MOSFET Gener Descrpton al ii Thi Dual Ns Channel MOSFET has been desgned i usng Fai hi Semionducor' adv ed Power i rc l d c ts anc Trenc proc s t opt z t RDS( @ VGS = 2. . h es o i e he mi 5v ON) tm Feat es ur 600 mA,20 V RDS( = 700 m ON) RDS( = 850 m ON) ESD prot t di ( e 3) eci on ode not RoHS Compl i ant @ VGS = 4. V 5 @ VGS = 2. V 5 Appl i i ons cat LiIon Batery Pac t k 6 5 4 1 2 3 Absol e Maxi um Ratngs ut m i Sym bol VDSS VGSS ID PD TJ,TSTG TA=25 C unl sot es herwie not s ed o S1 G1 D2 1 6 D1 2 3 5 4 G2 S2 Par et am er Drai Sourc Vol ne t age Gat Sourc Vol ee t age Drai Current - Cont n i nuous - Puled s Power Dispat ( eady St e) s i i St on at ( e 1a) Not Ratngs i 20 12 600 1000 625 446 -55 t +150 o Unis t V V mA mW C ( e 1a) Not ( e 1b) Not Operat and St i ng orage Junci Temp t on erat ure Range Ther alChar erstcs m act i i R R JA JA Not Thermal ssanc Junci t Ambi nt ( e 1a) Re it e, t oone 200 280 C/ W Thermal ssanc Junci t Ambi nt ( e 1b) Re it e, t oone Not Package Mar ng and Or i I or aton ki derng nf m i Dev ce Mar ng i ki C Dev ce i FDY3000NZ ReelSie z 7' ' Tape wi h dt 8 mm Quantt iy 3000 uni t s 2007 Fai hi Semionduc or Corporat rc l d c t i on FDY3000NZ Rev B www.ai hi emi om f rc l ds . c FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS TA = 25 unless otherwise noted C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Test Conditions VGS = 0 V, ID = 250 A Min 20 Typ Max Units V Off Characteristics ID = 250 A, Referenced to 25 C VDS = 16 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = 4.5 V, VDS = 0 V VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25 C VGS = 4.5 V, ID = 600 mA VGS = 2.5 V, ID = 500 mA VGS = 1.8 V, ID = 150 mA VGS = 4.5 V, ID=600mA, TJ = 125 C VDS = 5 V, ID = 600 mA 0.6 1.0 -3 0.25 0.37 0.73 0.35 1.8 14 1 10 1 1.3 mV/ C A A A V mV/ C On Characteristics VGS(th) VGS(th) TJ RDS(on) ( Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance 0.70 0.85 1.25 1.00 S gFS Ciss Coss Crss Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance ( Note 2) VDS = 10 V, f = 1.0 MHz V GS = 0 V, 60 20 10 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd VSD trr Qrr Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 6 8 8 2.4 12 16 16 4.8 1.1 ns ns ns ns nC nC nC VDS = 10 V, VGS = 4.5 V ID = 600 mA, 0.8 0.16 0.26 Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 150 mA (Note 2) 0.7 8 1 1.2 V nS nC IF = 600 mA, dIF/dt = 100 A/s Notes: unction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of 1. R JA is the sum of the j the drain pins. R JC is guaranteed by design while R CA is determined by the user' board design s a) 200 C/W when 2 mounted on a 1in pad of 2 oz copper b) 280 C/W when mounted on a minimum pad of 2 oz copper Scale 1 :1 on letter size paper 2. Pulse Test:Pulse Width < 300 s, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection againts ESD. No gate overvoltage rating is implied. FDY3000NZ Rev B www.fairchildsemi.com FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Typical Characteristics 1 RDS(ON),NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 3.5V ID,DRAIN CURRENT (A) 0.8 2.6 3.0V 2.5V 2.0V 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 VGS = 2.0V 0.6 0.4 2.5V 3.0V 3.5V 4.5V 0.2 0 0 0.25 0.5 0.75 1 VDS,DRAIN-SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1 RDS(ON),ON-RESISTANCE (OHM) 1.6 RDS(ON),NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 600mA VGS = 4.5V 1.4 ID = 300mA 0.9 0.8 0.7 0.6 TA = 125oC 0.5 0.4 0.3 0.2 1 2 3 4 5 VGS,GATE TO SOURCE VOLTAGE (V) TA = 25oC 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 o 125 150 TJ,JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 1 IS,REVERSE DRAIN CURRENT (A) VDS = 5V ID,DRAIN CURRENT (A) 0.8 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 1 VGS = 0V 0.1 TA = 125oC 0.01 25oC -55oC 0.001 0.6 0.4 TA = 125oC 25oC -55oC 0.2 0 0.5 1 1.5 2 2.5 VGS,GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD,BODY DIODE FORW ARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDY3000NZ Rev B www.fairchildsemi.com FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Typical Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) ID = 600mA 4 CAPACITANCE (pF) VDS = 5V 10V 3 15V 100 90 80 70 60 50 40 30 20 10 Crss 0 4 8 12 16 20 Coss Ciss f = 1MHz VGS = 0 V 2 1 0 0 0.2 0.4 0.6 0.8 1 Qg, GATE CHARGE (nC) 0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 10 P(pk), PEAK TRANSIENT POWER (W) 30 25 20 15 10 5 Figure 8 Capacitance Characteristics. . ID, DRAIN CURRENT (A) SINGLE PULSE R JA = 280C/W TA = 25C 1 RDS(ON) LIMIT 10ms 100ms 10s 1ms 1s 0.1 VGS = 4.5V SINGLE PULSE R JA = 280oC/W TA = 25oC 0.01 0.1 1 DC 10 100 0 0.0001 0.001 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE R JA(t) = r(t) *R JA R JA =280 C/W P(pk) t1 t2 TJ - TA = P *R JA(t) Duty Cycle, D = t1 / t2 0.1 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDY3000NZ Rev B www.fairchildsemi.com FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Dimensional Outline and Pad Layout 1.70 1.50 0.30 0.15 6 4 0.50 0.50 1.20 BSC 1.70 1.55 1.25 1.80 1 (0.20) 3 0.30 0.50 1.00 0.60 0.56 0.18 0.10 0.55 LAND PATTERN RECOMMENDATION SEE DETAIL A 0.35 BSC 0.20 BSC DETAIL A 0.10 0.00 SCALE 2 : 1 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. FDY3000NZ Rev B www.fairchildsemi.com TRADEMARKS The following are registered and unregistered tradem ark s F airc hild S em ic onduc tor owns or is authoriz ed to use and is not intended to b e an ex haustiv e list of all suc h tradem ark s. F A C T Q uiet S eriesTM G lob alO p toisolatorTM G TO TM H iS eC TM I2 C TM i-Lo TM Im p liedD isc onnec tTM IntelliM A X TM IS O P L A N A R TM L ittleF ETTM M IC R O C O U P L ER TM M ic roF ETTM M ic roP ak TM M IC R O W IR ETM M SXTM M S X P roTM A c ross the b oard. A round the world.TM The P ower F ranc hise(R) P rogram m ab le A c tiv e D roop TM A C Ex TM A c tiv eA rray TM B ottom lessTM B uild it N owTM C oolF ETTM CROSSVOLTTM D O M ETM Ec oS P A R K TM E2 C M O S TM EnS ignaTM F A C T(R) F A S T(R) F A S TrTM FPSTM F R F ETTM O CXTM O C X P roTM O P TO L O G IC (R) O P TO P L A N A R TM PACM ANTM PO PTM P ower24 7 TM P owerEdgeTM P owerS av erTM P owerTrenc h(R) Q F ET(R) Q STM Q T O p toelec tronic sTM Q uiet S eriesTM R ap idC onfigureTM R ap idC onnec tTM S erD esTM S c alarP um p TM S IL EN T S W ITC H ER S M A R T S TA R TTM SPM TM S tealthTM S up erF ETTM S up erS O TTM-3 S up erS O TTM-6 S up erS O TTM-8 S y nc F ETTM TC M TM Tiny B oostTM Tiny B uc k TM Tiny P W M TM Tiny P owerTM Tiny L ogic (R) TIN Y O P TO TM TruTranslationTM UHC(R) (R) U niF ETTM VCXTM W ireTM DISC L AIMER F A IR C H IL D S EM IC O N D U C TO R R ES ER V ES TH E R IG H T TO M A K E C H A N G ES W ITH O U T F U R TH ER N O TIC E TO A N Y P R O D U C TS H ER EIN TO IM P R O V E R EL IA B IL ITY , F U N C TIO N O R D ES IG N . F A IR C H IL D D O ES N O T A S S U M E A N Y L IA B IL ITY A R IS IN G O U T O F TH E A P P L IC A TIO N O R U S E O F A N Y P R O D U C T O R C IR C U IT D ES C R IB ED H ER EIN ; N EITH ER D O ES IT C O N V EY A N Y L IC EN S E U N D ER ITS P A TEN T R IG H TS , N O R TH E R IG H TS O F O TH ER S . TH ES E S P EC IF IC A TIO N S D O N O T EX P A N D TH E TER M S O F F A IR C H IL D 'S W O R L D W ID E TER M S A N D C O N D ITIO N S , S P EC IF IC A L L Y TH E W A R R A N TY TH ER EIN , W H IC H C O V ER S TH ES E P R O D U C TS . L IF E SU P P O RT P O L IC Y F A IR C H IL D 'S P R O D U C TS A R E N O T A U TH O R IZ ED F O R U S E A S C R ITIC A L C O M P O N EN TS IN L IF E S U P P O R T D EV IC ES O R S Y S TEM S W ITH O U T TH E EX P R ES S W R ITTEN A P P R O V A L O F F A IR C H IL D S EM IC O N D U C TO R C O R P O R A TIO N . A s used herein: 1 . L ife sup p ort dev ic es or sy stem s are dev ic es or sy stem s whic h, (a) are intended for surgic al im p lant into the b ody , or (b ) sup p ort or sustain life, or (c ) whose failure to p erform when p rop erly used in ac c ordanc e with instruc tions for use p rov ided in the lab eling, c an b e reasonab ly ex p ec ted to result in signific ant injury to the user. P RO DU C T STATU S DEF IN ITIO N S De fin itio n o f Te rm s 2. A c ritic al c om p onent is any c om p onent of a life sup p ort dev ic e or sy stem whose failure to p erform c an b e reasonab ly ex p ec ted to c ause the failure of the life sup p ort dev ic e or sy stem , or to affec t its safety or effec tiv eness. Da ta s h e e t Id e n tific a tio n A dv anc e Inform ation P ro d u c t Sta tu s F orm ativ e or In D esign F irst P roduc tion De fin itio n This datasheet c ontains the design sp ec ific ations for p roduc t dev elop m ent. S p ec ific ations m ay c hange in any m anner without notic e. This datasheet c ontains p relim inary data, and sup p lem entary data will b e p ub lished at a later date. F airc hild S em ic onduc tor reserv es the right to m ak e c hanges at any tim e without notic e in order to im p rov e design. This datasheet c ontains final sp ec ific ations. F airc hild S em ic onduc tor reserv es the right to m ak e c hanges at any tim e without notic e in order to im p rov e design. This datasheet c ontains sp ec ific ations on a p roduc t that has b een disc ontinued b y F airc hild sem ic onduc tor. The datasheet is p rinted for referenc e inform ation only . R ev . I22 P relim inary N o Identific ation N eeded F ull P roduc tion O b solete N ot In P roduc tion |
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